Semtech Corporation ST9018
NPN Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 C O TO-92 Plastic Package Symbol VCBO VCEO VEBO IC Ptot Tj TS Symbol D E F G H I hFE hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) CCBO fT Min. 28 39 54 72 97 132 30 15 5 700 Value 30 15 5 50 400 150 -55 to +150 Typ. 1.3 1100 Max. 45 60 80 108 146 198 50 0.5 1.7 - Unit V V V mA mW O C C Unit V V V nA V pF MHz O Parameter DC Current Gain at VCE = 5 V, IC = 1 mA Current Gain Group Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Cutoff Current at VCB = 12 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Collector Base Capacitance at VCB = 10 V, f = 1 MHz Gain Bandwidth Product at VCE = 5 V, IC = 5 mA SEMTECH ELECTRONICS LTD. (Subsid...