MMBTSC1815
MMBTSC1815 is NPN Transistor manufactured by SEMTECH.
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As plementary type the PNP transistor MMBTSA1015 is remended.
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SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=6V, IC=2m A Current Gain Group
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
Value 60 50 5 150 50 200 150 -55 to +150
Unit V V V m A m A m W
Symbol
Min.
Typ.
Max.
Unit
O Y G L at VCE=6V, IC=150m A Collector Saturation Voltage at IC=100m A, IB=10m A Base Saturation Voltage at IC=100m A, IB=10m A Collector Cutoff Current at VCB=60V at VEB=5V Gain Bandwidth Product at VCE=10V, IC=1m A Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1m A, f=1KHz, RG=10KΩat h FE h FE h FE h FE h FE VCE(sat) VBE(sat) ICBO IEBO f T COB NF
70 120 200 350 25 80
- 2 1
140 240 400 700 0.25 1 0.1 0.1 3 1
V V µA µA MHz p F d B
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/12/2005
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SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated :...
