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MMBTSC2411
NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups P, Q and R according to its DC current gain.
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Absolute Maximum Ratings (T
a
= 25 OC) Symbol VCBO VCEO VEBO IC Ptot Tj TS
SOT-23 Plastic Package V al ue 40 32 5 500 200 150 -55 to +150 Unit V V V mA mW
O
Parameter C o ll e ct o r B as e V o lt a g e Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at T
a =25
O
C C
O
C Symbol P Q R hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT Cob Min. 82 120 180 40 32 5 Typ. 250 6 Max. 180 270 390 1 1 0.
MMBTSC2411 Datasheet
