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MMBTSC2223
NPN Silicon Epitaxial Planar Transistor High frequency amplifier The transistor is subdivided into three groups, R, O and Y, according to its DC current gain.
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SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group R O Y Symbol hFE hFE hFE VCE(sat) ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO fT COB CC-rb'b NF Min. 40 60 90 30 20 4 400 600 1 12 3 Typ. Max. 80 120 180 0.3 0.1 0.
MMBTSC2223 Datasheet
