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MMBTSC2712
NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain.
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Features
․High voltage and high current: VCEO=50V, IC=150mA(max) ․High hFE: hFE=70~700 ․Low noise: NF=1dB(typ.), 10dB(max) ․Small package
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 30 200 125 -55 to +125 Unit V V V mA mA mW
O
C C
O
SEMTECH ELECTRONICS LTD.
MMBTSC2712 Datasheet
