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MMBTSC2712 - NPN Transistor

Key Features

  • ․High voltage and high current: VCEO=50V, IC=150mA(max) ․High hFE: hFE=70~700 ․Low noise: NF=1dB(typ. ), 10dB(max) ․Small package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 30 200 125 -55 to +125 Unit V V V mA mA mW O C C O.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. www.DataSheet4U.com Features ․High voltage and high current: VCEO=50V, IC=150mA(max) ․High hFE: hFE=70~700 ․Low noise: NF=1dB(typ.), 10dB(max) ․Small package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 30 200 125 -55 to +125 Unit V V V mA mA mW O C C O SEMTECH ELECTRONICS LTD.