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MMBTSC2715
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 35 30 4 50 10 200 125 -55 to +125 Unit V V V mA mA mW
O
C C
O
Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Current Gain Group R O Y Symbol hFE hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Cob Gpe Min. 40 70 120 100 27 Typ.
MMBTSC2715 Datasheet
