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SSF8NP60U - N-Channel MOSFET

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance TO-220 SSF8NP60U Marking and pin Assignment Schematic diagram.

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Datasheet Details

Part number SSF8NP60U
Manufacturer SILIKRON
File Size 454.51 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF8NP60U Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS RDS(on) ID 600V 0.73Ω (typ.) 8A ① Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance TO-220 SSF8NP60U Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application (adaptor, lighting, charger etc.) and a wide variety of other applications.