SNM041R4DNAQ
SNM041R4DNAQ is Single N-channel Power MOSFET manufactured by SIT.
芯力特
SNM041R4DNAQ Single N-channel, 40V, 211A, Power MOSFET
Features
- Drain-Source Withstand Voltage: 40V
- Max. RDS(on) : 1.4mΩ @ VGS=10V
- Automotive applications
- AEC-Q101 Qualified
- Excellent ON resistance
- General footprint package PDFN5×6-8L
- 100% Rg and Avalanche tested
- MSL1
PRODUCT APPEARANCE ：
PDFN5×6-8L
DESCRIPTION
The SNM041R4DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SNM041R4DNAQ is in pliance with Ro HS. Applications:
- Automotive systems
- DC/DC converters
- Power supply converters circuit
- Load/Power Switching for portable device
PIN CONFIGURATION
REC V0.2 May 2024
1 / 11
.sitcores.
芯力特
MARKING
SNM041R4DNAQ Single N-channel, 40V, 211A, Power MOSFET
WLSI 04457 DNMW
WLSI 04457 DN M W
= pany (Group) Code = Device Code = Special Code = Month = Week
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (4) Pulsed Drain Current (3) Continuous Drain Current Avalanche Energy L=0.3m H Power Dissipation...
