SNM041R4DNAQ Description
The SNM041R4DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.
SNM041R4DNAQ Key Features
- Drain-Source Withstand Voltage: 40V
- Max. RDS(on) : 1.4mΩ @ VGS=10V
- Automotive