SNM041R7DNAQ Description
The SNM041R7DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.
SNM041R7DNAQ Key Features
- Drain-Source Withstand Voltage: 40V
- Max. RDS(on) : 1.7mΩ @ VGS=10V
- Automotive