SNM067R9DNAQ Overview
Description
PRODUCT APPEARANCE ： PDFN5×6-8L The SNM067R9DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- Drain-Source Withstand Voltage: 60V
- Max. RDS(on) : 8.5mΩ @ VGS=-10V 13.3mΩ @ VGS=4.5V
- Automotive applications
- AEC-Q101 Qualified
- Excellent ON resistance
- General footprint package PDFN5×6-8L
- 100% Rg and Avalanche tested
