SNM067R9DNAQ
SNM067R9DNAQ is Single N-channel Power MOSFET manufactured by SIT.
芯力特
SNM067R9DNAQ Single N-Channel, 60V, 57A, Power MOSFET
Features
- Drain-Source Withstand Voltage: 60V
- Max. RDS(on) : 8.5mΩ @ VGS=-10V
13.3mΩ @ VGS=4.5V
- Automotive applications
- AEC-Q101 Qualified
- Excellent ON resistance
- General footprint package PDFN5×6-8L
- 100% Rg and Avalanche tested
- MSL1
DESCRIPTION
PRODUCT APPEARANCE ：
PDFN5×6-8L
The SNM067R9DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SNM067R9DNAQ is in pliance with Ro HS. Applications:
- Automotive systems
- DC/DC converters
- Power supply converters circuit
- Load/Power Switching for portable device
PIN CONFIGURATION
REC V1.0 May 2024
1 / 11
.sitcores.
芯力特
MARKING
SNM067R9DNAQ Single N-Channel, 60V, 57A, Power MOSFET
WLSI 06303 DNMW
WLSI 06303 DN M W
= pany (Group) Code = Device Code = Special Code = Month =...
