Datasheet Summary
128Mb: x4, x8, x16 SDRAM 3.3V
SYNCHRONOUS DRAM
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Intel PC-100 (3-3-3) or PC133 (3-3-3) patible Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access precharge time Programmable burst lengths: 1, 2, or 4 using Interleaved Burst Addressing Auto Precharge and Auto Refresh modes 64ms, 4,096-cycle refresh quad-row refresh, (15.6µs/row) Self Refresh mode 1 LVTTL-patible inputs and outputs Single +3.3V ±0.3V power supply The x16 devices are optimized for both single and dual rank DIMM applications. The x8 devices are...