SFF75N06M Datasheet | SSDI

FEATURES : - - - - - - - - - - - - Advanced high-cell density withstands high energy Very low conduction and switching losses Fast recovery drain-to-source diode with soft recovery Rugged construction with poly silicon gate Ultra low RDS (on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package TX, TXV and Space Level screening available MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Drain to Gate Voltage (RGS = 1.0 mΩ) Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25 C @ TC = 55o C o SYMBOL VDS VDG V GS ID Top & Tstg RΘ JC PD VALUE 60 60 + 20 56 1/ -55 to +150 1 125 95 UNIT Volts Volts Volts Amps o C o C/W Watts CASE OUTLINE: TO-254 (Sufix M) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate CASE OUTLINE: TO-254Z (Sufix Z) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate Available with Glass or Ceramic Seals. Contact Facory for details. NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00311B .. SFF75N06M SFF75N06Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25o C (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID = 250µA) SYMBOL MIN TYP MAX UNIT BVDSS ID=37.5A ID=75A ID=37.5A 60 75 2 15 - 13 15 19 Drain to Source on State Resistance (VGS = 10 V,Tc = 150o C) RDS(on) ID(on) VGS(th) gfs IDSS 4.0 250 1000 +100 -100 120 17 64 27 66 100 60 1.4 150 2900 1100 275 V mΩ A V On State Drain...