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SFF75N08M - N-Channel Power MOSFET

Features

  • Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching Enhanced replacement for IRF7MS2907 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit.

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Datasheet Details

Part number SFF75N08M
Manufacturer SSDI
File Size 72.62 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFF75N08M Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF75N08M SFF75N08Z 55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET Features: • • • • • • • • • Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching Enhanced replacement for IRF7MS2907 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET TO-254 and TO-254Z Note 1: maximum current limited by package configuration Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max.
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