SFF75N06-28 Datasheet | SSDI

FEATURES : - Rugged construction with poly silicon gate - Low RDS (on) and high transconductance - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input transfer capacitance for easy paralleling - Hermetically sealed surface mount package - TX, TXV and Space Level screening available MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Drain to Gate Voltage (RGS = 1.0 m S) Gate to Source Voltage Continuous Drain Current @ TC = 25o C Operating and Storage Temperature Thermal Resistance, Junction to Case (All Four) Total Device Dissipation @ TC = 25 o C SYMBOL VDS VDG VGS ID Top & Tstg R 2 JC PD 30 AMP 1/ 60 VOLTS 25m S N-CHANNEL POWER MOSFET 28 PIN CLCC VALUE 100 60 ±20 30 -55 to +150 3.5 35 UNIT Volts Volts Volts Amps o C o C/W Watts PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE: 1, 15 - 28 DRAIN: 5 - 11 GATE: 2, 3, 13, 14 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0001A .. PRELIMINARY SOLID STATE DEVICES, INC. 14005 Stage Road - Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 - Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25o C (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source 60% of Rated ID, TC = 25o C ON State Resistance 2/ Rated ID, TC = 25o C (VGS = 10 V) 60% of Rated ID, TC = 150o C Gate Threshold Voltage (VDS =VGS, ID =250:A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS =60% rated ID) Zero Gate Voltage Drain Current (VDS =80% rated VDS, VGS =0 V, T A = 25o C ) (VDS =80% rated VDS, VGS =0 V, TA = 125o C ) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to...