SFT2907A2 Datasheet | SSDI

Features : - - - - - - High Speed Switching Transistor Multiple Devices Reduce Board Space High Power Dissipation: Up to 600 m W Replacement for 2N2907AU TX, TXV, S-Level Screening Available NPN plimentary Parts Available (SFT2222A2) DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT2907A2 __ __ │ └ Screening 2/ __ = mercial │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package GW = Gullwing .. Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Continuous Collector Current Power Dissipation @ TA = 25ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to PCB) Gullwing (GW) Per Device Total Symbol VCEO VCBO VEBO IC PD TOP & Tstg RθJ-PCB Value 60 60 5 600 500 660 -65 to +200 245 Units Volts Volts Volts m A m W ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0031D Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-4474 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SFT2907A2 Series Electrical Characteristic 4/ Collector - Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current .. Symbol IC = 10 m A VCE = 30 V VCB = 50 V VCB = 60 V VCB = 50 V, TA = 150 ºC VEB = 4.0 V VEB = 5.0 V VCE = 10V, IC = 0.1 m A VCE = 10V, IC = 1.0 m A VCE = 10V, IC = 10 m A VCE = 10V, IC = 150 m A VCE = 10V, IC = 500 m A VCE = 10V, IC = 10 m A, TA = -55ºC Min - - - -...