SPD5614 Datasheet | SSDI

FEATURES : Fast Recovery: 5 µsec Maximum PIV 200 to 1000 Volts Low Reverse Leakage Current Hermetically Sealed Single Chip Construction High Surge Rating Low Thermal Resistance Available in Surface Mount Versions Replaces 1N5614 to 1N5622 TX, TXV, and Space Level Screening Available - - - - - - - - - - MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage SPD5614 SPD5616 SPD5618 SPD5620 SPD5622 Symbol VRRM VRWM VR IO IFSM TJ & Tstg RθJL Value 200 400 600 800 1000 1 30 -65 to +175 35 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25o C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO, allow junction to reach equilibrium between pulses, TA=25o C) Operating and Storage Temperature Thermal Resistance Junction to Leads, L = ⅜″ Amps Amps o o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00011B Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SPD5614 thru SPD5622 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 1 Amp, TA = 25o C, 300 µs Pulse) Instantaneous Forward Voltage Drop (IF = 1 Amp, TA = -55o C, 300 µs Pulse) Reverse Leakage Current (Rated VR, TA = 25o C, 300 µs Pulse minimum) Max Reverse Leakage Current (Rated VR, TA = 100o C, 300 µs Pulse minimum) Max Junction Capacitance (VR =10 VDC, TA = 25o C, f= 1 MHz) Reverse Recovery Time (IF =500 m A, IR =1 A, IRR =250 m A, TA = 25o C) CASE OUTLINE: AXIAL Symbol VF VF IR IR CJ trr Value 1.0 1.2 2 200 20 5 Unit Volts Volts µA µA pf µsec KEY TO DIMENSIONS Section MIN MAX --0.150" ØA --0.180" B 0.027" 0.033" ØC 1.00" --D TYPICAL OPERATING CURVES TA = 25o C Unless otherwise specified FORWARD VOLTAGE vs. FORWARD CURRENT PERCENT OF MAXIMUM FORWARD CURRENT RATING (%) FORWARD CURRENT (AMPS) 100 80 60 40 20 0 0 25 50...