SPD5614SM Datasheet | SSDI

FEATURES : Standard Recovery: 5 µsec Maximum PIV 200 to 1000 Volts Low Reverse Leakage Current Hermetically Sealed Surface Mount package Single Chip Construction High Surge Rating Low Thermal Resistance Available in round or square tab versions Higher Voltages Available Up To 1,800VContact Factory TX, TXV, and Space Level Screening Available - - - - - - - - - - MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage SPD5614SM & SMS SPD5616SM & SMS SPD5618SM & SMS SPD5620SM & SMS SPD5622SM & SMS Symbol VRRM VRWM VR IO IFSM TJ & Tstg RθJE Value 200 400 600 800 1000 1 30 -65 to +175 30 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25o C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO, allow junction to reach equilibrium between pulses, TA=25o C) Operating and Storage Temperature Thermal Resistance Junction to End Tab Amps Amps o o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00013D Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-4474 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SPD5614SM thru SPD5622SMS ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 1 Amp, TA = 25o C, 300 µs Pulse) Instantaneous Forward Voltage Drop (IF = 1 Amp, TA = -55o C, 300 µs Pulse) Reverse Leakage Current (Rated VR, TA = 25o C, 300 µs Pulse minimum) Max Reverse Leakage Current (Rated VR, TA = 100o C, 300 µs Pulse minimum) Max Junction Capacitance (VR =10 VDC, TA = 25o C, f= 1 MHz) Reverse Recovery Time (IF =500 m A, IR =1 A, IRR =250 m A, TA = 25o C) CASE OUTLINE: (SM) SURFACE MOUNT ROUND TAB Symbol VF VF IR IR CJ trr Value 1.0 1.2 2 200 20 5 Unit Volts Volts µA µA pf µsec CASE OUTLINE: (SMS) SURFACE MOUNT SQUARE TAB DIMENSIONS DIM. A B C MIN. .095” .185” .010” MAX. .105” .205” .022” DIMENSIONS DIM. A B C D MIN. .125” .235”...