• Part: SST13LP01
  • Description: Dual-Band Power Amplifier
  • Manufacturer: SST
  • Size: 402.71 KB
Download SST13LP01 Datasheet PDF
SST
SST13LP01
SST13LP01 is Dual-Band Power Amplifier manufactured by SST.
FEATURES : - High Gain: - Typically 28 d B gain across 2.4-2.5 GHz over temperature 0°C to +85°C - Typically 30-33 d B gain across 4.9-5.8 GHz over temperature 0°C to +85°C - High linear output power: - >29 d Bm P1d B across 2.4-2.5 GHz (Exceeding maximum rating of average output power, never measure with CW source! Pulsed single-tone source with <50% duty cycle is remended.) - Meets 802.11g OFDM ACPR requirement up to 23 d Bm - Added EVM~4% up to 21 d Bm for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 23 d Bm - ~28 d Bm P1d B (Pulsed single-tone signal) across 4.9~5.8 GHz - Meets 802.11a OFDM ACPR requirement up to 22 d Bm over whole band - Added EVM~4% up to 20 d Bm for 54 Mbps 802.11a signal - High power-added efficiency/Low operating current for both 802.11a/b/g applications - ~24%/250 m A @ POUT = 23 d Bm for 802.11g - ~23%/260 m A @ POUT = 23 d Bm for 802.11b - ~9.5%/320 m A @ POUT = 20 d Bm for 802.11a - Built-in Ultra-low IREF power-up/down control - IREF <3 m A - Low idle current - ~70 m A ICQ (802.11b/g) - ~170 m A ICQ (802.11a) - High-speed power-up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns - High temperature stability - ~1 d B gain/power variation between 0°C to +85°C across 2.4~2.5 GHz - ~3.5/1.5 d B gain/max linear power variation between 0°C to +85°C across 4.9~5.8 GHz - ~1 d B detector variation over 0°C to +85°C - Low shut-down current (< 0.1 µA) - On-chip power detection - 20 d B dynamic range on-chip power detection - Simple input/output matching - Packages available - 24-contact WQFN (4mm x 4mm) - Non-Pb (lead-free) packages available APPLICATIONS: - - - - - - WLAN (IEEE 802.11a/g/b) Japanese WLAN Hyper LAN2 Multimedia Home RF Cordless...