SST36VF1601 Description
The SST36VF1601 is 1M x16 CMOS Concurrent Read/ Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches.The SST36VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601 device conforms to JEDEC standard...
SST36VF1601 Key Features
- Organized as 1M x16
- Dual Bank Architecture for Concurrent Read/Write Operation
- 16 Mbit Bottom Sector Protection
- SST36VF1601: 12 Mbit + 4 Mbit
- Single 2.7-3.6V for Read and Write Operations
- Superior Reliability
- Endurance: 100,000 cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption
- Active Current: 25 mA