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SST36VF1601C Datasheet PDF

SST SST36VF1601C

The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.
Part No. SST36VF1601C
Datasheet SST36VF1601C Download
Manufacturer
SST
Description 16 Mbit (x8/x16) Dual-Bank Flash Memory
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SST36VF1601C datasheet page 1 preview

FEATURES

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● Organized as 1M x16 or 2M x8
● Dual Bank Architecture – 16 Mbit Bottom Sector Protection - SST36VF1601C: 12 Mbit + 4 Mbit – 16 Mbit Top Sector Protection - SST36VF1602C: 4 Mbit + 12 Mbit
● Single 2.7-3.6V for Read and Write Operations
● Superior Reliability – Endurance: 100,000 cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption: – Active Current: 6 mA typical – Standby Current: 4 µA typical – Auto Low Power Mode: 4 µA typical
● Hardware Sector Protection/WP# Input Pin – Protects the 4 outermost sectors (8 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high
● Hardware Reset Pin (RST#) – Resets the internal state machine to reading array data
● Byte# Pin – Selects 8-bit or 16-bit mode
● Sector-Erase Capability – Uniform 2 KWord sectors
● Chip-Erase Capability
● Block-Erase Capability – Uniform 32 KWord blocks
● Erase-Suspend / Erase-Resume Capabilities
● Security ID Feature – SST: 128 bits – User: 128 bits
● Fast Read...
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