SST36VF1601E Description
The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC...
SST36VF1601E Key Features
- Organized as 1M x16 or 2M x8
- Dual Bank Architecture for Concurrent Read/Write Operation
- 16 Mbit Bottom Sector Protection
- SST36VF1601E: 12 Mbit + 4 Mbit
- 16 Mbit Top Sector Protection
- SST36VF1602E: 4 Mbit + 12 Mbit
- Single 2.7-3.6V for Read and Write Operations
- Superior Reliability
- Endurance: 100,000 cycles (typical)
- Greater than 100 years Data Retention