2STW4468 - High Power NPN Epitaxial Planar Bipolar Transistor

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ST Microelectronics

Part number	2STW4468
Manufacturer	STMicroelectronics
File Size	213.91 KB
Description	High Power NPN Epitaxial Planar Bipolar Transistor
Datasheet	2STW4468 Datasheet
Additional preview pages of the 2STW4468 datasheet.

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247 3 2 1.

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Published: Mar 27, 2007 |