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2ST1480 - (2ST1480 / 2ST2480) Complementary power transistors

General Description

The devices are manufactured using new “PBHCD” (power bipolar high current density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Table 1.

Key Features

  • Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Fully insulated package 2 1.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2ST1480 2ST2480 Complementary power transistors Preliminary data Features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Fully insulated package 2 1 Applications ■ ■ ■ ■ 3 Voltage regulation Computer and peripheral equipment Audio amplifier Relay driver Figure 1. Internal schematic diagrams SOT-32FP Description The devices are manufactured using new “PBHCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. www.DataSheet4U.com Table 1. Device summary Marking 2ST1480 SOT-32FP 2ST2480 2ST2480 Bag Package Packaging Order codes 2ST1480 October 2009 Doc ID 16380 Rev 1 1/7 www.st.