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2STA1962 - High power PNP epitaxial planar bipolar transistor

General Description

This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Key Features

  • High breakdown voltage VCEO > -230V Complementary to 2STC5242 Fast-switching speed Typical fT= 30MHz 3 2 1.

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www.DataSheet4U.com 2STA1962 High power PNP epitaxial planar bipolar transistor Preliminary Data Features ■ ■ ■ ■ High breakdown voltage VCEO > -230V Complementary to 2STC5242 Fast-switching speed Typical fT= 30MHz 3 2 1 Application Audio power amplifier TO-3P Description This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code 2STA1962 Marking 2STA1962 Package TO-3P Packaging Tube September 2007 Rev1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.