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2STBN15D100 - NPN Transistor

General Description

The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

Figure 1.

Table 1.

Key Features

  • Good hFE linearity.
  • High fT frequency.
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2STBN15D100 Low voltage NPN power Darlington transistor Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration. TAB 3 1 D²PAK Figure 1. Internal schematic diagrams R1 = 8 kΩ R2 = 150 Ω Table 1. Device summary Order code 2STBN15D100T4 Marking BN15D100 Package D²PAK January 2010 Doc ID 16117 Rev 2 Packaging Tape and reel 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings Table 2.