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2STA1695 Datasheet High Power PNP Epitaxial Planar Bipolar Transistor

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com 2STA1695 High power PNP epitaxial planar bipolar transistor.

General Description

The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

Key Features

  • Preliminary data High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC 3 2 1.

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