BTB04T Datasheet | STMicroelectronics

FEATURES VERY LOW IGT = 10m A max LOW IH = 15m A max BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 50m A di G/dt = 0.1A/µs Parameter BTA BTB A1 A2 TO220AB (Plastic) Value Tc = 90°C Tc = 95°C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 42 40 8 10 50 - 40 to + 150 - 40 to + 110 260 4 Unit A ITSM I2t d I/dt A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 T/D/S/A °C °C °C Symbol BTA / BTB04600 T/D/S/A 600 700 T/D/S/A 700 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 110°C March 1995 1/5 BTA04 T/D/S/A / BTB04 T/D/S/A THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 4.4 3.2 3.3 2.4 °C/W Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-II I IV VGT VGD tgt IL VD=12V (DC) RL =33Ω Tj=25°C Tj=110°C Tj=25°C Tj=25°C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH - VTM - IDRM IRRM d V/dt - IT= 100m A gate open ITM= 5.5A tp= 380µs VDRM VRRM Rated Rated up to Tj=25°C Tj=25°C Tj=25°C Tj=110°C Tj=110°C MAX MAX MAX MAX TYP MIN Tj=110°C TYP 10 1 10 1 MAX MAX MAX MIN TYP TYP 10 20 15...