BUH615D Datasheet | STMicroelectronics

DESCRIPTION The BUH615D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1500 700 5 8 12 5 8 55 -65 to 150 150 Unit V V V A A A A W o o C C 1/4 December 1999 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES I EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ ts tf ts tf Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V IC = 6 A IC = 6 A IC = 6 A I B = 2.5 A I B = 2.5 A V CE = 5 V IC = 6 A I B2 = -3 A 4 2.7 190 2.3 350 T j = 125 o C Min. Typ. Max. 0.2 2 300 1.5 1.3 9 3.9 280 µs ns µs ns Unit m A m A m A V V V CC = 400 V I B1 = 1.5 A IC = 6 A I B1 = 1.25 A V ceflyback f = 15625 Hz I B2 = -3 A  π = 1050 sin  106 t 10   V ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 6 A I B1 = 1.5 A V ceflyback f = 31250 Hz I B2 = -3 A  π = 1200 sin  106 t V 5   2.3 200 µs ns Vf Diode Forward Voltage IF = 5 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP. MIN. 5.35 3.30 2.90...