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IRFP460 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP460 500V < 0.27Ω 18.4A s TYPICAL RDS(on) = 0.

General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITH MODE LOW POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max.

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