| Part Number | IRFP460 |
|---|---|
| Manufacturer | Intersil |
| Overview |
IRFP460
Data Sheet July 1999 File Number
2291.3
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET desi.
* 20A, 500V * rDS(ON) = 0.270Ω * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Infor. |
IRFP460 Datasheet
The IRFP460 is a N-Channel Power MOSFET.
| Part Number | IRFP460 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source.
*Drain Current *ID= 20A@ TC=25℃ *Drain Source Voltage- : VDSS= 500V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) *Fast Switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and gener. |
| Part Number | IRFP460 |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | . . |
| Part Number | IRFP460 |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg.
) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
( *)Pulse width limited by safe operating area May 2001 Value 500 500 ±30 18.4 11.6 73.6 220 1.75 3.5 *65 to. |