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IRFP460N - Power MOSFET

Key Features

  • 500 0.24.
  • Low Gate Charge Qg Results in Simple Drive Available Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt RoHS.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 124 40 57 Single D FEATURES 500 0.