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IRFP460LC - Power MOSFET

General Description

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

Key Features

  • Ultra low gate charge.
  • Reduced gate drive requirement.
  • Enhanced 30 V VGS rating.
  • Reduced Ciss, Coss, Crss.
  • Isolated central mounting hole Available.
  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. Fo.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRFP460LC Vishay Siliconix Power MOSFET TO-247 S D G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 120 32 49 Single 0.27 FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole Available • Dynamic dV/dt rating • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.