| Part Number | IRFP460LC |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
.
*Drain Current *ID= 20A@ TC=25℃ *Drain Source Voltage- : VDSS= 500V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) *Fast Switching DESCRIPTION *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS. |
IRFP460LC Datasheet
The IRFP460LC is a N-Channel MOSFET Transistor.
| Part Number | IRFP460LC |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gat. = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive. |
| Part Number | IRFP460LC |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced ga.
* Ultra low gate charge * Reduced gate drive requirement * Enhanced 30 V VGS rating * Reduced Ciss, Coss, Crss * Isolated central mounting hole Available * Dynamic dV/dt rating * Repetitive avalanche rated * Material categorization: for definitions of compliance please see www.vishay.com/doc?. |