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M29W008AB Datasheet 8 Mbit 1mb X8 / Boot Block Low Voltage Single Supply Flash Memory

Manufacturer: STMicroelectronics

Overview: M29W008AT M29W008AB 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output s s s s s s SECURITY PROTECTION MEMORY AREA INSTRUCTIONS ADDRESS CODING: 3 digits MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks TSOP40 (N) 10 x 20mm s s BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s s LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M29W008AT: D2h – Bottom Device Code, M29W008AB: DCh G RP VCC s 20 A0-A19 W E M29W008AT M29W008AB 8 DQ0-DQ7 s s RB VSS AI02716 March 2000 1/30 M29W008AT, M29W008AB Figure 2. TSOP Connections Table 1.

General Description

The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply.

For Program and Erase operations the necessary high voltages are generated internally.

The device can also be programmed in standard programmers.

Key Features

  • coders and sense amplifiers. E High deselects the memory and reduces the power consumption to.

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M29W008AB Distributor