M29W008DT
FEATURES
SUMMARY
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SUPPLY VOLTAGE
- 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70ns, 90ns PROGRAMMING TIME: 10µs per Byte typical PROGRAM/ERASE CONTROLLER (P/E.C.)
- Embedded Byte Program Algorithm
- Status Register bits and Ready/Busy Output 19 MEMORY BLOCKS
- 1 Boot Block (Top or Bottom location)
- 2 Parameter and 16 Main Blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTIPLE BLOCK PROTECTION/ TEMPORARY UNPROTECTION MODE ERASE SUSPEND and RESUME MODES LOW POWER CONSUMPTION
- Standby and Automatic Standby modes 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION
- Defectivity below 1ppm/year ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- M29W008DT Device Code: D2h
- M29W008DB Device Code: DCh
Figure 1. Package
TSOP40 (N) 10 x 20mm
August 2004
1/34
M29W008DT, M29W008DB
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TABLE OF CONTENTS
FEATURES
SUMMARY
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