M29W008DT Overview
6 Block Addresses (Top Boot Block) . 7 Block Addresses (Bottom Boot Block) . 9 Address Inputs (A0-A19).
M29W008DT Key Features
- 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70ns, 90ns PROGRAMMING TIME: 10µs per Byte typical PROGRAM/ERASE
- Embedded Byte Program Algorithm
- Status Register bits and Ready/Busy Output 19 MEMORY BLOCKS
- 1 Boot Block (Top or Bottom location)
- 2 Parameter and 16 Main Blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTIPLE BLOCK PROTECTION/ TEMPORARY UNPROTECTION MODE
- Standby and Automatic Standby modes 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION
- Defectivity below 1ppm/year ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- M29W008DT Device Code: D2h
- M29W008DB Device Code: DCh