M29W008B
DESCRIPTION
The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in
June 1999
TSOP40 (N) 10 x 20 mm
Figure 1. Logic Diagram
20 A0-A19 W E G RP M29W008T M29W008B
8 DQ0-DQ7
AI02189
1/30
This is information on a product still in production but not remended for new designs.
M29W008T, M29W008B
Figure 2. TSOP Pin Connections
A16 A15 A14 A13 A12 A11 A9 A8 W RP NC RB A18 A7 A6 A5 A4 A3 A2 A1 1 40 A17 VSS NC A19 A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 G VSS E...
