M29W400BT Datasheet | STMicroelectronics

M29W400BT M29W400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME - 10µs per Byte/Word typical 11 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 8 Main Blocks 44 s s s s PROGRAM/ERASE CONTROLLER - Embedded Byte/Word Program algorithm - Embedded Multi-Block/Chip Erase algorithm - Status Register Polling and Toggle Bits - Ready/Busy Output Pin TSOP48 (N) 12 x 20mm SO44 (M) s ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s UNLOCK BYPASS PROGRAM MAND - Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION - Standby and Automatic Standby 18 A0-A17 W E G RP M29W400BT M29W400BB 15 DQ0-DQ14 DQ15A- 1 BYTE RB VCC s s s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION - Defectivity below 1 ppm/year ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Top Device Code M29W400BT: 00EEh - Bottom Device Code M29W400BB: 00EFh s s AI02934 April 2000 1/22 M29W400BT, M29W400BB Figure 2. TSOP...