Part M29W400FB
Description 4-Mbit Boot Block 3 V Supply Flash memory
Manufacturer Numonyx
Size 795.69 KB
M29W400FB Datasheet (PDF) Download
Numonyx

M29W400FB Overview

Key Features

  • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read
  • Access time: 55 ns, 70 ns
  • Programming time – 10 µs per byte/word typical
  • 19 memory blocks (M29W800F) – 1 boot block (top or bottom location) – 3 parameter blocks – 15 main blocks
  • 11 memory blocks (M29W400F) – 1 boot block (top or bottom location) – 3 parameter blocks – 7 main blocks
  • Program/erase controller – Embedded byte/word program algorithms
  • Erase suspend and resume modes – Read and program another block during erase suspend
  • Unlock bypass program command – Faster production/batch programming
  • Temporary block unprotection mode
  • Common Flash interface – 64-bit security code
M29W400FB datasheet preview

Related Datasheets

Part Number Manufacturer Description
M29W400BB STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
M29W400B STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
M29W400BT STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
M29W400DB STMicroelectronics 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
M29W400T STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory