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M29W400T - 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

This page provides the datasheet information for the M29W400T, a member of the M29 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory family.

Description

The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 2.7V to 3.6V VCC supply.

For Program and Erase operations the necessary high voltages are generated internally.

Features

  • d fifth cycles are used to input Coded cycles to the C. I. This Coded sequence is the same for all Program/Erase Controller instructions. The ’Com.

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Datasheet Details

Part number M29W400T
Manufacturer STMicroelectronics
File Size 245.97 KB
Description 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Datasheet download datasheet M29W400T Datasheet
Additional preview pages of the M29W400T datasheet.

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Other Datasheets by ST Microelectronics
  • M29W400B - 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
  • M29W400BB - 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
  • M29W400BT - 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
  • M29W400DB - 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
  • M29W400DT - 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
  • M29W002BB - 2 Mbit 256Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
  • M29W002BT - 2 Mbit 256Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
  • M29W004B - 4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory

Full PDF Text Transcription

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M29W400T M29W400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.
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