M29W400DT Datasheet | STMicroelectronics

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA Features SUMMARY s SUPPLY VOLTAGE - VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME - 10µs per Byte/Word typical 11 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 8 Main Blocks SO44 (M) s s PROGRAM/ERASE CONTROLLER - Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend TSOP48 (N) 12 x 20mm s s UNLOCK BYPASS PROGRAM MAND - Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION - Standby and Automatic Standby s FBGA s TFBGA48 (ZA) 6 x 9mm s 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Top Device Code M29W400DT: 00EEh - Bottom Device Code M29W400DB: 00EFh s February 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/36 M29W400DT, M29W400DB TABLE OF CONTENTS SUMMARY...