M29W400DB Overview
Key Features
- Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read
- Access time: 45, 55, 70 ns
- Programming time – 10 μs per byte/word typical
- 11 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 8 main blocks
- Program/Erase controller – Embedded byte/word program algorithms
- Erase Suspend and Resume modes – Read and Program another block during Erase Suspend
- Unlock bypass program command – Faster production/batch programming
- Temporary block unprotection mode
- Low power consumption – Standby and Automatic Standby
- 100,000 Program/Erase cycles per block
