M36L0T8060B1 Datasheet | STMicroelectronics

Features Multichip package - 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory 1 die of 64 Mbit (4 Mb ×16) Pseudo SRAM Supply voltage - VDDF = 1.7 V to 1.95 V - VDDQF = VCCP = 2.7 V to 3.1 V - VPPF = 9 V for fast program Electronic signature - Manufacturer code: 20h - Top device code M36L0T8060T1: 880Dh - Bottom device code M36L0T8060B1: 880Eh Package - ECOPACK® FBGA - - TFBGA88 (ZAQ) 8 x 10 mm - - Security - 64 bit unique device number - 2112 bit user programmable OTP cells Block locking - All blocks locked at power-up - Any bination of blocks can be locked with zero latency - WPF for block lock-down - Absolute write protection with VPPF = VSS mon Flash interface (CFI) - - Flash memory - Synchronous/asynchronous read - Synchronous burst read mode: 52 MHz - Asynchronous page read mode - Random access: 85 ns Synchronous burst read suspend Programming time - 5 µs typical word program time using Buffer Enhanced Factory Program mand Memory organization - Multiple bank memory array: 16 Mbit banks - Parameter blocks (top or bottom location) Dual operations - Program/erase in one bank while read in others - No delay between read and write operations 100 000 program/erase cycles per block - PSRAM - - - - - - - - Access time: 65 ns Low standby current: 90 µA (TA≤40 °C) Deep power-down current: 10 µA Byte control: UB/LB patible with standard LPSRAM Wide operating temperature - TA = - 30 to +85 °C Power-down...