M58CR032D Description
TFBGA Connections (Top view through package) . Security Block and Protection Register Memory Map . 10 Address Inputs (A0-A20).
M58CR032D Key Features
- VDD = 1.65V to 2V for Program, Erase and Read
- VDDQ = 1.65V to 3.3V for I/O Buffers
- VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ
- Burst mode Read: 54MHz
- Page mode Read (4 Words Page)
- Random Access: 85, 100, 120 ns
- 10µs by Word typical
- Double/Quadruple Word programming option
- Dual Bank Memory Array: 8/24 Mbit
- Parameter Blocks (Top or Bottom location)