Download M58CR064Q Datasheet PDF
M58CR064Q page 2
Page 2
M58CR064Q page 3
Page 3

M58CR064Q Description

TFBGA Connections (Top view through package) . 10 Address Inputs (A0-A21). 10 Data Input/Output (DQ0-DQ15).

M58CR064Q Key Features

  • VDD = 1.65V to 2V for Program, Erase and Read
  • VDDQ = 1.65V to 3.3V for I/O Buffers
  • VPP = 12V for fast Program (optional)
  • Synchronous Burst Read mode : 54MHz
  • Asynchronous/ Synchronous Page Read mode
  • Random Access: 85, 90, 100, 120ns
  • 10µs by Word typical
  • Double/Quadruple Word Program option
  • Dual Bank Memory Array: 16/48 Mbit
  • Parameter Blocks (Top or Bottom location)