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M58CR064D - 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

This page provides the datasheet information for the M58CR064D, a member of the M58 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory family.

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Datasheet preview – M58CR064D

Datasheet Details

Part number M58CR064D
Manufacturer STMicroelectronics
File Size 0.98 MB
Description 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
Datasheet download datasheet M58CR064D Datasheet
Additional preview pages of the M58CR064D datasheet.

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Other Datasheets by ST Microelectronics
  • M58CR064C - 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
  • M58CR064P - 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
  • M58CR064Q - 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
  • M58CR032C - 32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
  • M58CR032D - 32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
  • M58BF008 - 8 Mbit 256Kb x32 / Burst Flash Memory
  • M58BW016BB - 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
  • M58BW016BT - 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

Full PDF Text Transcription

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M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 85, 90, 100, 120ns FBGA s PROGRAMMING TIME – 10µs by Word typical – Double/Quadruple Word Program option TFBGA56 (ZB) 6.
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