Datasheet4U Logo Datasheet4U.com

M58MR032D - 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory

Description

The M58MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V V DD supply for the circuitry.

For Program and Erase operations the necessary high voltages are generated internally.

Features

  • asymmetrically blocked architecture. M58MR032 has an array of 71 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. Only one bank at the time is allowed to be in program or erase mode. It is possible to perform burst reads that cross bank boundaries. The memory features an erase suspend allowing reading or programming in another block. Once suspended the erase can be resumed.

📥 Download Datasheet

Datasheet Details

Part number M58MR032D
Manufacturer STMicroelectronics
File Size 396.89 KB
Description 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
Datasheet download datasheet M58MR032D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M58MR032C M58MR032D 32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read s s – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 40MHz – Page mode Read (4 Words Page) – Random Access: 100ns FBGA TFBGA48 (ZC) 10 x 4 ball array s PROGRAMMING TIME – 10µs by Word typical – Two or four words programming option s MEMORY BLOCKS – Dual Bank Memory Array: 8/24 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.
Published: |