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M58MR064C - 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory

Description

The M58MR064 is a 64 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.0V VDD supply for the circuitry.

For Program and Erase operations the necessary high voltages are generated internally.

Features

  • asymmetrically blocked architecture. M58MR064 has an array of 135 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. Only one bank at the time is allowed to be in program or erase mode. It is possible to perform burst reads that cross bank boundaries. The memory features an erase suspend allowing reading or programming in another block. Once suspended the erase can be resume.

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Datasheet Details

Part number M58MR064C
Manufacturer STMicroelectronics
File Size 399.66 KB
Description 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
Datasheet download datasheet M58MR064C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M58MR064C M58MR064D 64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory s SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read s s – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 54MHz – Page mode Read (4 Words Page) – Random Access: 100ns FBGA TFBGA48 (ZC) 10 x 4 ball array s PROGRAMMING TIME – 10µs by Word typical – Two or four words programming option s MEMORY BLOCKS – Dual Bank Memory Array: 16/48 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.
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