Click to expand full text
M65KA128AL
128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs
Feature summary
■
128Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 MWords, each 16 bits wide Supply Voltage – VDD = 1.65V to 1.95V – VDDQ = 1.65 to 1.95V for Input/Output Synchronous Burst Read and Write – Fixed Burst lengths: 1, 2, 4, 8 words or full Page – Burst Types: Sequential and Interleaved. – Maximum clock frequency: 104MHz – CAS Latency 2, 3 Automatic Precharge Low Power features: – PASR (Partial Array Self Refresh), – Automatic TCSR (Temperature Compensated Self Refresh) – Driver Strength (DS) – Deep Power-Down Mode Delivery form: Unsawn Wafer Auto Refresh and Self Refresh LVCMOS Interface Compatible with Multiplexed Addressing Operating temperature – –25°C to +90°C
■
■
Wafer
■ ■
www.
M65KA128AL Datasheet
