Download NAND01G-M Datasheet PDF
NAND01G-M datasheet preview
NAND01G-M page 2
Page 2
NAND01G-M page 3
Page 3

Similar Part Number

Manufacturer Part Number Description
STMicroelectronics Logo STMicroelectronics NAND01G-A 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
Numonyx Logo Numonyx NAND01G-B2B NAND flash memory
STMicroelectronics Logo STMicroelectronics NAND01G-N 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package

All NAND01G-M datasheets

NAND01G-M Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 NAND Flash ponent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 LPSDRAM ponent . . . . . . . . .

NAND01G-M Key Features

  • 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM
  • 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 2 dice of 256 Mb (x16) SDR LPSDRAMs
  • 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash +1 die of 256 Mb (x16) DDR LPSDRAM
  • 1 die of 512 Mb (x16) NAND Flash + 1 die of 256 Mb or 512 Mb (x16) DDR LPSDRAM Supply voltages
  • VDDF = 1.7V to 1.95V or 2.5V to 3.6V
  • VDDD = VDDQD = 1.7V to 1.9V Electronic Signature ECOPACK® packages Temperature range
  • 30 to 85°C
  • (1) Preliminary specifications
  • Fast Block Erase
  • Block erase time: 2ms (typ)