NAND01G-M Overview
Key Features
- (1) Preliminary specifications
- Fast Block Erase – Block erase time: 2ms (typ)
- Status Register Data integrity – 100,000 Program/Erase cycles – 10 years Data Retention Flash Memory
| Part | NAND01G-M |
|---|---|
| Description | NAND Flash Memories |
| Manufacturer | STMicroelectronics |
| Size | 246.62 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| NAND01G-A | STMicroelectronics | 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories |
| NAND01G-N | STMicroelectronics | 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package |
| NAND01G-B2B | Numonyx | NAND flash memory |
| NAND02GAH0L | Numonyx | NAND flash memories |
| NAND02G-B2C | Numonyx | NAND flash memory |