SD1530-01 Datasheet | STMicroelectronics

DESCRIPTION The SD1530-01 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-01 is packaged in the .280” input matched stripline package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 2.6 87.5 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 11, 1993 °C/W rev. 1 1/3 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO I CBO h FE IC = 20m A IC = 20m A IE = 2m A VCB = 50V VCB = 5V IE = 0m A VBE = 0V IC = 0m A IE = 0m A IC = .5A 60 60 3.5 - - - - - - - - 2 V V V m A DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP Note: f = 1025 - 1150MHz f = 1025 - 1150MHz PIN = 5.6 W PIN = 5.6 W VCE = 50 V VCE = 50 V 35 9.0 - - - - W d B Pulse W idth = 10 µSec, Duty Cycle = 1% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions assi stance. IMPEDANCE DATA TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 2/3 rev....